The Stanford Photonics Research Center

Device and Method for Manufacturing low cost 1.3um VCSEL for Optical Communications

This invention enables the low cost fabrication of an optical-electronic semiconductor device for that operates at wavelengths above 1.2 microns, particularly for optical communication systems. This technology overcomes many of the current problems facing optical communications systems. This GaInNAs materials system is very promising for this application as it allows the fabrication of VCSELs at 1.3 um by combining a 1.3 um active region with the already well-developed AlAs/GaAs mirror technology.